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SSM4800AGM Arkusz danych(PDF) 4 Page - Silicon Standard Corp. |
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SSM4800AGM Arkusz danych(HTML) 4 Page - Silicon Standard Corp. |
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4 / 5 page ![]() 02/09/2007 Rev.1.00 www.SiliconStandard.com 4 SSM4800AGM Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 4 8 12 16 0 5 10 15 Q G , Total Gate Charge (nC) I D =9 A V DS =25 V V DS =20 V V DS =15 V 10 100 1000 1 5 9 131721 2529 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthia=125 ℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0 20 40 60 02 46 V GS , Gate-to-Source Voltage (V) T j =125 o C T j =25 o C V DS =5V |
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