SSM9435K datasheet(2/4 Pages) SSC

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SSM9435K

Rev.1.01 5/25/2004

Electrical Characteristics @ Tj=25

oC (unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=-1mA

-0.02

V/°C

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-5.3A

Ω

VGS=-4.5V, ID=-4.2A

100

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-5.3A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=70

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS=-

Total Gate Charge

ID=-5.3A

9.2

Qgs

Gate-Source Charge

VDS=-24V

2.8

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

5.2

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-1A

td(off)

Turn-off Delay Time

RG=6Ω ,VGS=-10V

Fall Time

RD=15Ω

-17

Ciss

Input Capacitance

VGS=0V

507

912

Coss

Output Capacitance

VDS=-15V

222

Crss

Reverse Transfer Capacitance

f=1.0MHz

158

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

VSD

Forward On Voltage

IS=-2.3A, VGS=0V

-1.2

trr

Reverse Recovery Time

IS=-5.3A, VGS=0V,

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Surface mounted on 1 in

2 copper pad of FR4 board ; 120 °C/W when mounted on Min. copper pad.

± 25V

±100

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