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SSM9510GM Arkusz danych(PDF) 6 Page - Silicon Standard Corp.

Numer części SSM9510GM
Szczegółowy opis  N- and P-channel Enhancement-mode Power MOSFETs
PDF  8 Pages
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Producent  SSC [Silicon Standard Corp.]
Strona internetowa  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9510GM Arkusz danych(HTML) 6 Page - Silicon Standard Corp.

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SSM9510GM
2/10/2005 Rev.2.01
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage vs.
Reverse Diode
Junction Temperature
40
50
60
70
80
90
100
3456
789
10
11
-V GS ,Gate-to-Source Voltage (V)
I D = -5A
T A =25
o C
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D =-5A
V G = -10 V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
0
50
100
150
T j , Junction Temperature (
o C)
P-channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
0
10
20
30
40
50
60
70
01
234
56
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
-10V
-8.0V
-6.0V
-4.5V
V G =-3.0V
0
10
20
30
40
50
60
01
23
45
6
-V DS , Drain-to-Source Voltage (V)
T A =150
o C
-10V
-8.0V
-6.0V
-4.5V
V G =-3.0V



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