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SSM9575M Arkusz danych(PDF) 2 Page - Silicon Standard Corp.

Numer części SSM9575M
Szczegółowy opis  P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
PDF  5 Pages
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Producent  SSC [Silicon Standard Corp.]
Strona internetowa  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9575M Arkusz danych(HTML) 2 Page - Silicon Standard Corp.

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SSM9575M/GM
12/02/2004 Rev.2.01
Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
-
V
∆BV
DSS/
∆Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=-1mA
-
-0.04
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-4A
-
-
90
m
Ω
VGS=-4.5V, ID=-3A
-
-
120
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-4A
-
7
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-60V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-48V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
-
nA
Qg
Total Gate Charge
2
ID=-4A
-
18
28
nC
Qgs
Gate-Source Charge
VDS=-48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
2
VDS=-30V
-
12
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=-10V
-
68
-
ns
tf
Fall Time
RD=30Ω
32
-
ns
Ciss
Input Capacitance
VGS=0V
-
1745
2790
pF
Coss
Output Capacitance
VDS=-25V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
125
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-2A, VGS=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
2
IS=-4A, VGS=0V,
-
56
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
146
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.
±100



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