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SSM9971GD Arkusz danych(PDF) 4 Page - Silicon Standard Corp. |
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SSM9971GD Arkusz danych(HTML) 4 Page - Silicon Standard Corp. |
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4 / 5 page ![]() www.SiliconStandard.com 4 of 5 SSM9971GD 10/16/2005 Rev.3.1 Fig 7. Gate charge characteristics Fig 8. Typical capacitance characteristics Fig 9. Maximum safe operating area Fig 10. Effective transient thermal impedance Fig 11. Switching time waveforms Fig 12. Gate charge diagram 10 100 1000 10000 1 5 9 1317 2125 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz Ciss Crss Coss 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 40 Q G , Total Gate Charge (nC) V DS =48V V DS =38V V DS =30V I D =5A td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 Duty foctor=0.5 Single Pulse R θja=90°C/W 0.01 0.1 1 10 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1s 1ms 10ms 100ms DC |
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