2N7002KA datasheet(2/11 Pages) NXP

2 / 11 page

2N7002KA_3

Product data sheet

Rev. 03 — 25 February 2008

2 of 11

NXP Semiconductors

2N7002KA

N-channel TrenchMOS FET

Ordering information

Limiting values

Table 2.

Ordering information

Type number

Package

Name

Description

Version

2N7002KA

TO-236AB

plastic surface-mounted package; 3 leads

SOT23

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

°C ≤ T

j ≤ 150 °C

VDGR

drain-gate voltage (DC)

°C ≤ T

j ≤ 150 °C; RGS =20kΩ

-60

VGS

gate-source voltage

±15

VGSM

peak gate-source voltage

tp ≤ 50 µs; pulsed; duty cycle = 25 %

±40

drain current

Tsp =25 °C; VGS = 10 V; see Figure 2 and 3

320

Tsp = 100 °C; VGS = 10 V; see Figure 2

200

IDM

peak drain current

Tsp =25 °C; pulsed; tp ≤ 10 µs; see Figure 3

1.28

Ptot

total power dissipation

Tsp =25 °C; see Figure 1

0.83

Tstg

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source current

Tsp =25 °C

300

ISM

peak source current

Tsp =25 °C; pulsed; tp ≤ 10 µs

1.2

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