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SM-8 DUAL N-CHANNEL ENHANCEMENT

MODE AVALANCHE RATED MOSFET

ISSUE 1 - NOVEMBER 1995

PARTMARKING DETAIL – M4206N

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

60

V

1A

Pulsed Drain Current

8A

Gate-Source Voltage

± 20

V

1A

Avalanche Current – Repetitive

600

mA

Avalanche Energy – Repetitive

15

mJ

Operating and Storage Temperature Range

-55 to +150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

Any single die “on”

Both die “on” equally

2.25

2.75

W

W

Derate above 25°C*

Any single die “on”

Both die “on” equally

18

22

mW/ °C

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die “on”

Both die “on” equally

55.6

45.5

°C/ W

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB

with copper equal to 2 inches square.

SM-8

(8 LEAD SOT223)

ZDM4206N