CS3511

DS845F1

9

DC ELECTRICAL CHARACTERISTICS

Test Conditions (unless otherwise specified): AGND = DGND = PGND = 0 V; All voltages with respect to ground;

through the Full-Bridge Output Filter shown in Figure 4 on page 16.

DIGITAL INTERFACE SPECIFICATIONS

AGND = DGND = PGND = 0 V; All voltages with respect to ground; Unless otherwise specified.

Notes:

Parameters

Symbol

Test Conditions

Min

Typ

Max

Units

Sleep Supply Current

-5.2

-

mA

snubber

-5.2

-

mA

Mute Supply Current

-38-

mA

snubber

-38-

mA

Quiescent Current

-68-

mA

snubber

-85-

mA

MOSFET On Resistance (each FET)

-

325

-

m

Ω

5VGEN Nominal Voltage

-

5.2

-

V

5VGEN DC current source

-

30

-

mA

REF Nominal Voltage

-1.2

-

V

BIASCAP Nominal Voltage

-

2.5

-

V

VP Under-Voltage Error Falling Trigger Point

-7.56-

V

VP Under-Voltage Error Rising Trigger Point

-8.08-

V

V5A Under-Voltage Error Falling Trigger Point

-4.1

-

V

V5A Under-Voltage Error Rising Trigger Point

-4.3

-

V

Charge Pump Under-Voltage Error Falling

Trigger Point

-

1.55*VP

-

Charge Pump Under-Voltage Error Rising

Trigger Point

-

1.62*VP

-

Parameters

Symbol

Min

Max

Units

High-Level Input Voltage (MUTE, SLEEP)

(Note 11)

V5D - 2

-

V

High-Level Input Voltage (GAIN1, GAIN0)

V5D - 0.8

-

V

Low-Level Input Voltage (MUTE, SLEEP, GAIN1, GAIN0) (Note 11)

-1

V

(Note 11)

-

500

ns

High-Level Output Voltage (STATUS)

V5D - 0.5

-

V

Low-Level Output Voltage (STATUS)

-0.5

V

Input Leakage Current (MUTE, SLEEP)

-±10

μA

Input Leakage Current (GAIN1, GAIN0)

-±300

μA