PD85015STR-E datasheet(1/13 Pages) STMICROELECTRONICS

Numer części	PD85015STR-E

Szczegółowy opis	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PDF	13 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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1 / 13 page

July 2009

Doc ID 14466 Rev 2

1/13

13

PD85015-E

PD85015S-E

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 15 W with 16 dB

gain @ 870 MHz / 13.6 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC european

directive

Description

The PD85015-E is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 13.6 V in common source mode at

frequencies of up to 1 GHz. PD85015-E boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true

SMD plastic RF power package, PowerSO-10RF.

PD85015-E’s superior linearity performance

makes it an ideal solution for car mobile radio.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf (search for AN1294)

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order codes

Package

Packaging

PD85015-E

PowerSO-10RF (formed lead)

Tube

PD85015S-E

PowerSO-10RF (straight lead)

Tube

PD85015TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD85015STR-E

PowerSO-10RF (straight lead)

Tape and reel

www.st.com

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PD85015STR-E Arkusz danych(PDF) 1 Page - STMicroelectronics

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