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STGIPS14K60 Arkusz danych(PDF) 7 Page - STMicroelectronics

Numer części STGIPS14K60
Szczegółowy opis  IGBT intelligent power module (IPM) 12 A, 600 V, DBC isolated, SDIP-25L molded
PDF  19 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGIPS14K60 Arkusz danych(HTML) 7 Page - STMicroelectronics

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STGIPS14K60
Electrical characteristics
Doc ID 15927 Rev 3
7/19
3
Electrical characteristics
(TJ = 25 °C unless otherwise specified).
Note:
tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are
the switching time of IGBT itself under the internally given gate driving condition.
Table 7.
Inverter part
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
VCE(sat)
Collector-emitter
saturation voltage
VCC = Vboot = 15 V, VIN
(1)= 0 ÷ 5 V,
IC = 7 A
-2.1
2.5
V
VCC = Vboot = 15 V, VIN
(1)= 0 ÷ 5 V,
IC = 7 A, TJ = 125 °C
-1.8
ICES
Collector-cut off current
(VIN
(1)= 0 “logic state”)
VCE = 600 V, VCC = VBoot = 15 V
-
100
µA
VF
Diode forward voltage
VIN
(1) = 0 “logic state”, I
C = 7 A
-
2.1
V
Inductive load switching time and energy
ton
Turn-on time
VDD = 300 V,
VCC = Vboot = 15 V,
VIN
(1) = 0 ÷ 5 V,
IC = 7 A
(see
Figure 5)
-
270
ns
tc(on)
Crossover time (on)
-
130
toff
Turn-off time
-
320
tc(off)
Crossover time (off)
-
110
trr
Reverse recovery time
-
130
Eon
Turn-on switching losses
-
150
µJ
Eoff
Turn-off switching losses
-
90
1.
Applied between
HINi, LINi and GND for i = U, V, W (LIN inputs are active-low).



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