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SBYD17D Arkusz danych(PDF) 1 Page - Gulf Semiconductor |
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SBYD17D Arkusz danych(HTML) 1 Page - Gulf Semiconductor |
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1 / 2 page ![]() Rev.A1 www.gulfsemi.com SBYD17D SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE: : : :200V CURRENT: : : : 1.0A FEATURE GF1/ DO-214BA For surface mounted application High temperature metallurgic ally bonded Sintered glass junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 450℃/10sec/at terminal/complete device Submersible temperature of 265℃ for 10sec MECHANICAL DATA Terminal:Plated Terminal, solderable per MIL-STD 202, method 208C Case:Molded with UL-94 class V-0 recognized Flame Retardant Epoxy over Glass Polarity:color band denotes cathode end Mark:D17D Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated, for capacitive load, derate current by 20%) SYMBOL SBYD17D units Maximum Recurrent Peak Reverse Voltage Vrrm 200 V Maximum RMS Voltage Vrms 140 V Maximum DC blocking Voltage Vdc 200 V Reverse avalanche breakdown voltage at IR = 0.1 mA V(BR)R 225min V Maximum Average Forward Rectified Current If(av) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 30.0 A Maximum Forward Voltage at rated Forward current Ta =25℃ Vf 1.05 V Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =150℃ Ir 1.0 50.0 µ A Non-Repetitive Peak Reverse Avalanche Energy (Note 1) Ersm 7.0 mJ Typical Junction Capacitance (Note 2) Cj 15.0 pF Typical Thermal Resistance (Note 3) Rth(ja) 80.0 ℃/W Operating and Storage Temperature Range Tst, Tj -65 to +175 ℃ Note: 1. L=120mH; Tj=Tjmax prior to surge; inductive load switched off 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient 6.0mm2 copper pad to each terminal |
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