EDB101S datasheet(1/2 Pages) RECTRON

Numer części	EDB101S

Szczegółowy opis	GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere)

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Producent	RECTRON [Rectron Semiconductor]

Strona internetowa	http://www.rectron.com

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GLASS PASSIVATED SUPER FAST

VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere

RECTRON

SEMICONDUCTOR

TECHNICAL SPECIFICATION

FEATURES

* Surge overloading rating - 50 amperes peak

* Ideal for printed circuit board

* Reliable low cost construction utilizing molded

* Glass passivated device

* Polarity symbols molded on body

* Mounting position: Any

* Weight: 1.0 gram

* Epoxy : Device has UL flammability classification 94V-0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

ELECTRICAL CHARACTERISTICS (At TA = 25

oC unless otherwise noted)

EDB101S

THRU

EDB106S

DB-S

MAXIMUM RATINGS (At TA = 25

oC unless otherwise noted)

SILICON SURFACE MOUNT BRIDGE RECTIFIER

NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.

2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.

Dimensions in inches and (millimeters)

2001-4

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Volts

Maximum DC Blocking Voltage

Maximum Average Forward Current

at TA = 55

oC

Peak Forward Surge Current IFM (surge): 8.3 ms single half

sine-wave superimposed on rated load (JEDEC method)

Typical Junction Capacitance (Note 2)

Operating and Storage Temperature Range

SYMBOL

VRRM

VDC

IO

IFSM

CJ

TJ, TSTG

VRMS

Volts

Amps

1.0

30

15

-65 to + 150

Amps

pF

0 C

UNITS

EDB101S

EDB104S

EDB102S

EDB105S EDB106S

EDB103S

50

200

100

300

400

150

35

140

70

210

280

105

50

200

100

300

400

150

10

at Rated DC Blocking Voltage

CHARACTERISTICS

Maximum Reverse Recovery Time (Note 1)

VF

SYMBOL

IR

trr

UNITS

1.0

5.0

uAmps

nSec

Maximum DC Reverse Current

Maximum Forward Voltage at 1.0A DC

Volts

@TA = 25

oC

@TA =150

oC

EDB101S

EDB104S

EDB102S

EDB105S EDB106S

EDB103S

1.25

50

.255 (6.5)

.310 (7.9)

.290 (7.4)

.245 (6.2)

.042 (1.1)

.038 (1.0)

.013 (.330)

.009

.003 (.076)

.410 (10.4)

.060 (1.524)

.040 (1.016)

.360 (9.4)

(9.4)

.335 (8.51)

.320 (8.13)

.195 (5.0)

.205 (5.2)

.135 (3.4)

.115 (2.9)

MECHANICAL DATA

Podobny numer części - EDB101S

Producent	Numer części	Arkusz danych	Szczegółowy opis
Galaxy Semi-Conductor H...	EDB101S	110Kb / 2P	SILICON BRIDGE RECTIFIERS
Shenzhen Luguang Electr...	EDB101S	174Kb / 2P	Silicon Bridge Rectifiers
Diode Semiconductor Kor...	EDB101S	132Kb / 2P	SILICON BRIDGE RECTIFIERS
DIYI Electronic Technol...	EDB101S	1Mb / 2P	SINGLE PHASE 1.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Galaxy Semi-Conductor H...	EDB101S	137Kb / 3P	SILICON BRIDGE RECTIFIERS

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