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NTMFS4841NHT3G Arkusz danych(PDF) 4 Page - ON Semiconductor

Numer części NTMFS4841NHT3G
Szczegółowy opis  Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL
PDF  7 Pages
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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NTMFS4841NHT3G Arkusz danych(HTML) 4 Page - ON Semiconductor

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NTMFS4841NH
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25
30
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012
3456
Figure 1. On−Region Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 3.2 V
3.8 V
4.0 V
4.2 V
4.4 V
3.6 V
3.4 V
TJ = 25°C
4.6 V
4.8 V
5.0 V
7.0 V
10 V
0
10
20
30
40
50
60
70
80
90
12
34
5
6
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
TC = 25°C
TC = −55°C
TC = 125°C
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
11
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID = 30 A
TJ = 25°C
0.002
0.0025
0.003
0.0035
0.004
0.0045
0.005
0.0055
0.006
0.0065
0.007
0.0075
0.008
0.0085
0.009
0.0095
0.01
0.0105
0.011
0.0115
0.012
10
15
20
25
30
35
40
45
50
55
VGS = 11.5 V
VGS = 4.5 V
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
TJ = 25°C
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−55 −35 −15
5
25 45
65 85
145
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
ID = 30 A
VGS = 10 V
105
105
0.1
1
10
100
1000
10000
5
1015
2025
30
Figure 6. Drain−to−Source Leakage Current
versus Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 150°C
TJ = 125°C
TJ = 25°C



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