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4-2
RF2043
Rev A4 010110
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Current
120
mA
Input RF Power
+20
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VD=5.5V, ICC=70mA
Frequency Range
DC to >6000
MHz
1dB Bandwidth
5.5
GHz
Gain
11.3
dB
Freq= 100MHz
11.3
dB
Freq= 1000MHz
10.2
11.4
dB
Freq= 2000MHz
11.5
dB
Freq= 3000MHz
11.5
Freq= 4000MHz
9.9
Freq= 6000MHz
Gain Flatness
±0.05
dB
100MHz to 2000MHz
Noise Figure
7.6
dB
Freq= 1000MHz
Input VSWR
<1.8:1
In a 50
Ω system, DC to 3000MHz
<2.5:1
In a 50
Ω system, 3000MHz to 6000MHz
Output VSWR
<1.8:1
In a 50
Ω system, DC to 3000MHz
<2.6:1
In a 50
Ω system, 3000MHz to 6000MHz
Output IP3
+34.5
dBm
Freq= 1000MHz
Output P1dB
+18.5
dBm
Freq= 1000MHz
Reverse Isolation
16.5
dB
Freq= 1000MHz
Thermal
ICC=70mA, PDISS=370mW
ThetaJC
149
°C/W
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
142
°C
TAMB=+85°C
Mean Time Between Failures
1.4x103
years
TAMB=+85°C
3.4x105
years
TAMB=+25°C
1.8x109
years
TAMB=-40°C
Power Supply
With 22
Ω bias resistor
Device Operating Voltage
5.0
5.5
6.0
V
At pin 3 with ICC=70mA
Operating Current
70
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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