KM416RD8AS-RBM80 datasheet(4/64 Pages) SAMSUNG

4 / 64 page

Rev. 0.9 July 1999

Page 1

KM416RD8AS

Direct RDRAM™

Target

Overview

The Rambus Direct RDRAM™ is a general purpose high-

performance memory device suitable for use in a broad

range of applications including computer memory, graphics,

video, and any other application where high bandwidth and

low latency are required.

The 128Mbit Direct Rambus DRAMs (RDRAM®) ar

extremely high-speed CMOS DRAMs organized as 8M

words by 16 bits. The use of Rambus Signaling Level (RSL)

technology permits 800MHz transfer rates while using

conventional system and board design technologies. Direct

RDRAM devices are capable of sustained data transfers at

1.25 ns per two bytes (10ns per sixteen bytes).

The architecture of the Direct RDRAMs allows the highest

sustained bandwidth for multiple, simultaneous randomly

addressed memory transactions. The separate control and

data buses with independent row and column control yield

over 95% bus efficiency. The Direct RDRAM's thirty-two

banks support up to four simultaneous transactions.

System oriented features for mobile, graphics and large

memory systems include power management, byte masking.

Features

♦ Highest sustained bandwidth per DRAM device

- 1.6GB/s sustained data transfer rate

- Separate control and data buses for maximized

efficiency

- Separate row and column control buses for

easy scheduling and highest performance

- 32 banks: four transactions can take place simul-

taneously at full bandwidth data rates

♦ Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

♦ Advanced power management:

- Multiple low power states allows flexibility in power-

consumption versus time to transition to active state

- Power-down self-refresh

♦ Organization: 1Kbyte pages and 32 banks, x 16

♦ Uses Rambus Signaling Level (RSL) for up to 800MHz

operation

The 128Mbit Direct RDRAMs are offered in a CSP hori-

zontal package suitable for desktop as well as low-profile

add-in card and mobile applications.

Direct RDRAMs operate from a 2.5 volt supply.

Key Timing Parameters/Part Numbers

a.The “32s"designation indicates that this RDRAM core is composed of 32

banks which use a "split" bank architecture.

b.The “R"designation indicates that this RDRAM core uses Normal Power

Self Refresh.

c.The “S"designation indicates that this RDRAM core uses Low Power Self

Refresh.

Figure 1: Direct RDRAM Consumer CSP Package

Organization

Speed

Part Number

Binning

I/O

Freq.

MHz

trac (Row

Access

Time) ns

256Kx16x32sa -RM80

800

KM416RD8AS-RbM80

-SM80

800

KM416RD8AS-ScM80

SEC KOREA

KM4xx RD8AC

SEC KOREA

KM416RD8AS-RK80

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