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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BZX77B22 Arkusz danych(PDF) 1 Page - Shenzhen Ping Sheng Electronics Co., Ltd. |
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BZX77B22 Arkusz danych(HTML) 1 Page - Shenzhen Ping Sheng Electronics Co., Ltd. |
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1 / 2 page  BZX55B... Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Low noise D Very high stability D Available with tighter tolerances D VZ–tolerance ± 2% Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation l=4mm, TL=25°C PV 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 300 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=100mA VF 1.5 V Web Site: WWW.PS-PFS.COM |
Podobny numer części - BZX77B22 |
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Podobny opis - BZX77B22 |
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