MAX6819_05 datasheet(2/8 Pages) MAXIM

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SOT23 Power-Supply Sequencers

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ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

Note 1: 100% production tested at TA = +25°C. Specifications over temperature limit are guaranteed by design.

Note 2: Either VCC1 or VCC2 must be > 2.125V. The other supply can go to 0.

Note 3: Guaranteed by design, not production tested.

Note 4: tDELAY (s) = 2.48 ✕ 106 ✕ CSET

Referenced to GND

VCC1, VCC2, EN .....................................................-0.3V to +6.0V

SETV, SETD..................-0.3V to the higher of (VCC1 + 0.3V) and

(VCC2 + 0.3V)

GATE ...................................................................-0.3V to +12.0V

Input Current/Output Current (all pins) ...............................20mA

Continuous Power Dissipation (TA = +70°C)

6-Pin SOT23 (derate 8.7mW/°C above +70°C)............696mW

Operating Temperature Range .........................-40°C to +125°C

Junction Temperature ......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering 10s) ..................................+300°C

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Operating Voltage Range

VCC1,

VCC2

(Note 2)

0.9

5.5

VCC1, VCC2 Supply Current

ICC

VCC1 = VCC2 = +3.3V

120

µA

VCC1, VCC2 Disable Mode Current

VCC1 = VCC2 = +3.3V, EN = GND

µA

MAX6819

VCC1, VCC2 Slew Rate (Note 3)

MAX6820 (Note 4)

1.2 / tDELAY

V/s

Undervoltage Lockout (UVLO)

VUVLO

1.875

2.0

2.125

SETV Threshold

VTH

VSETV rising, enables GATE

0.602

0.618

0.634

SETV Input Current

(Note 3)

100

SETV Threshold Hysteresis

VSETV falling, disables GATE

-1

SETV to GATE Delay

tDELAY

VSETV > VTH, VEN

≥ 2V (MAX6819)

140

200

280

SETD Ramp Current (MAX6820)

ISETD

VCC1 or V CC2 > +2.125V

400

500

600

SETD Voltage (MAX6820)

VSETD

VCC1 or VCC2 > +2.125V

1.210

1.242

1.273

SETD Threshold Hysteresis

(MAX6820)

VSETD falling

-62

GATE Turn-On Time

tON

CGATE = 1500pF, VCC2 = +3.3V, VGATE = +7.8V

0.5

1.5

GATE Turn-Off Time

tOFF

CGATE = 1500pF, VCC2 = +3.3V, VGATE = +0.5V

µs

With respect to VCC2 (Note 2)

RGATE > 50M

Ω to VCC2

4.5

5.5

6.0

GATE Voltage

VGATE

With respect to VCC2 (Note 2)

RGATE > 5M

Ω to VCC2

4.0

6.0

VIL

0.4

EN Input Voltage

VIH

VCC1 or VCC2 > +2.125V to + 5.5V

2.0

ELECTRICAL CHARACTERISTICS

(VCC1 or VCC2 > +2.125V to +5.5V, TA = -40°C to +125°C, unless otherwise specified. Typical values are at TA = +25°C.) (Note 1)

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