Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

ƒ

75

100

°C/W

IRLML6402GPbF

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

A thermally enhanced large pad leadframe has been incorporated

into the standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This package,

dubbed the Micro3

™, is ideal for applications where printed

circuit board space is at a premium. The low profile (<1.1mm)

of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

The thermal resistance and power dissipation are the best

available.

Thermal Resistance

Description

07/22/08

www.irf.com

1

S

D

G

Parameter

Max.

Units

Drain- Source Voltage

-20

V

-3.7

-2.2

A

Pulsed Drain Current



-22

Power Dissipation

1.3

Power Dissipation

0.8

Linear Derating Factor

0.01

W/°C

Single Pulse Avalanche Energy

„

11

mJ

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

W

Micro3

™

PD - 96161