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TLE7239GS Arkusz danych(PDF) 10 Page - Infineon Technologies AG |
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TLE7239GS Arkusz danych(HTML) 10 Page - Infineon Technologies AG |
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10 / 37 page ![]() TLE7239GS Electrical Characteristics Data Sheet 10 Rev. 1.0, 2008-10-30 4 Electrical Characteristics 4.1 Absolute Maximum Ratings 1) Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. The values below are not considering combinations of different maximum conditions at one time 1) not subject to production test T j = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Absolute Maximum Ratings1) Pos. Parameter Symbol Limit Values Unit Test Conditions min. max. Power Supply 4.1.1 Power supply voltage Vbb -16 40 V -16V max. 2 minutes 4.1.2 Digital supply voltage V DD -0.3 5.5 V – 4.1.3 Power supply voltage for full short circuit protection (single pulse) ( T j = -40 °C … 150 °C) V bat(SC) 028 V – Power Stages 4.1.4 Load current I L A– channel 0, 1, 4, 5, 6, 7 -0.5 0.5 channel 2, 3 -0.25 0.25 4.1.5 Voltage at power transistor V DS –41 V – 4.1.6 Power transistor’s source voltage V Out_S -16 – V – 4.1.7 Power transistor’s drain voltage V Out_D –41 V – 4.1.8 Max. energy dissipation one channel single pulse for ch. 0, 1, 4, 5, 6, 7 E AS mJ 2) –65 T j(0) = 105 °C I D(0) = 0.35 A –50 T j(0) = 150 °C I D(0)= 0.250 A 4.1.9 Maximum energy dissipation one channel repetitive pulses for ch. 0, 1, 4, 5, 6, 7 E AR mJ 2) 1·104 cycles – 18 T j(0) = 105 °C I D(0) = 0.250 A 1·106 cycles – 13 T j(0) = 105 °C I D(0) = 0.220 A 4.1.10 Max. energy dissipation one channel single pulse for ch. 2,3 E AS mJ 2) –50 T j(0) = 105 °C I D(0) = 0.250 A –30 T j(0) = 150 °C I D(0)= 0.250 A |
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