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STPS30L30CT Arkusz danych(PDF) 4 Page - STMicroelectronics |
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STPS30L30CT Arkusz danych(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STPS30L30C 4/9 Doc ID 5506 Rev 6 Figure 12. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) Figure 8. Reverse leakage current versus reverse voltage applied (typical values per diode) Figure 9. Junction capacitance versus reverse voltage applied (typical values per diode) 0 5 10 15 20 25 30 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 VR(V) IR(mA) Tj=125°C Tj=25°C Tj=150°C 12 5 10 20 50 0.1 1.0 5.0 VR(V) C(nF) F=1MHz Tj=25°C Figure 10. Forward voltage drop versus forward current (maximum values per diode) Figure 11. Thermal resistance junction to ambient versus copper surface under tab 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 200 VFM(V) IFM(A) Tj=15 0 °C (typical values) Tj=12 5 °C Tj=25 °C 0 4 8 12 16 20 24 28 32 36 40 0 10 20 30 40 50 60 70 80 S(Cu) (cm²) Rth(j-a) (°C/W) Epoxy printed circuit board, D2PAK copper thickness = 35 µm 20 25 30 35 40 45 50 55 30 35 40 45 50 55 60 Forbidden area Operating area Varm (V) Iarm (A) |
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