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2SC4497 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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2SC4497 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC4497 2003-03-27 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 300 V, IE = 0 ¾ ¾ 0.1 mA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ¾ ¾ 0.1 mA Collector-base breakdown voltage V (BR) CBO IC = 0.1 mA, IE = 0 300 ¾ ¾ V Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 300 ¾ ¾ V hFE (1) (Note) VCE = 10 V, IC = 20 mA 30 ¾ 150 DC current gain hFE (2) VCE = 10 V, IC = 1 mA 20 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 2 mA ¾ ¾ 0.5 V Base-emitter saturation voltage VBE (sat) IC = 20 mA, IB = 2 mA ¾ ¾ 1.2 V Transition frequency fT VCE = 10 V, IC = 10 mA ¾ 70 ¾ MHz Collector output capacitance Cob VCB = 20 V, IE = 0, f = 1 MHz ¾ 3 4 pF Note: hFE (1) classification R: 30~90, O: 50~150 |
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