FCX591 datasheet(1/1 Pages) DIODES

Numer części	FCX591

Szczegółowy opis	SOT89 PNP SILICON PLANAR MEDIUM

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SOT89 PNP SILICON PLANAR MEDIUM

POWER HIGH PERFORMANCE TRANSISTOR

ISSUE 3 - NOVEMBER 1995

7

PARTMARKING DETAIL -

P1

COMPLEMENTARY TYPE -

FCX491

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Base Current

IB

-200

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO -80

V

IC=-100µA, IE=0

V(BR)CEO -60

V

IC=-10mA, IB=0*

V(BR)EBO -5

V

IE=-100µA, IC=0

Collector Cut-Off Current

ICBO

-100

nA

VCB=-60V

Collector -Emitter Cut-Off

Current

ICES

-100

nA

VCES=-60V

Emitter Cut-Off Current

IEBO

-100

nA

VEB=-4V, IC=0

Saturation Voltages

VCE(sat)

-0.3

-0.6

V

IC=-500mA,

IB=-50mA*

IC=-1A, IB=-100mA*

VBE(sat)

-1.2

V

IC=-1A, IB=-100mA*

Base-Emitter Turn-on Voltage

VBE(on)

-1.0

V

IC=-1A, VCE=-5V*

Static Forward Current Transfer

Ratio

hFE

100

80

15

300

IC=-1mA, VCE=-5V*

IC=-500mA, VCE=-5V*

IC=-1A, VCE=-5V*

IC=-2A, VCE=-5V*

Transition Frequency

fT

150

MHz

IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

10

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical Characteristics graphs see FMMT591 datasheet

FCX591

3 - 92

C

B

E

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