CMLDM7484 datasheet(1/2 Pages) CENTRAL

Numer części	CMLDM7484

Szczegółowy opis	N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS

PDF	2 Pages

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Producent	CENTRAL [Central Semiconductor Corp]

Strona internetowa	http://www.centralsemi.com

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

8.0

V

Continuous Drain Current

ID

450

mA

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance (Note 1)

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C)

N-CH (Q1)

P-CH (Q2)

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

IGSSF, IGSSR VGS=8.0V, VDS=0

-

3.0

-

3.0

μA

IDSS

VDS=30V, VGS=0

-

1.0

-

1.0

μA

BVDSS

VGS=0, ID=10μA

30

-

V

BVDSS

VGS=0, ID=100μA

-

30

-

V

VGS(th)

VDS=VGS, ID=250μA

0.5

1.0

0.5

1.0

V

VSD

VGS=0, IS=400mA

0.5

1.1

-

V

VSD

VGS=0, IS=100mA

-

0.5

1.1

V

rDS(ON)

VGS=4.5V, ID=200mA

-

0.46

-

Ω

rDS(ON)

VGS=4.5V, ID=430mA

-

1.1

Ω

rDS(ON)

VGS=2.5V, ID=100mA

-

0.56

-

Ω

rDS(ON)

VGS=2.5V, ID=200mA

-

2.0

Ω

rDS(ON)

VGS=1.8V, ID=75mA

-

0.73

-

Ω

rDS(ON)

VGS=1.8V, ID=100mA

-

3.3

Ω

CMLDM7484

SURFACE MOUNT

N-CHANNEL AND P-CHANNEL

ENHANCEMENT-MODE

COMPLEMENTARY MOSFETS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLDM7484

consists of complementary N-Channel and P-Channel

Enhancement-mode silicon MOSFETs designed for

high speed pulsed amplifier and driver applications.

These MOSFETs offer Very Low rDS(ON) and Low

Threshold Voltage.

MARKING CODE: 8C7

FEATURES:

• ESD Protection up to 2kV

• 350mW Power Dissipation

• Very Low rDS(ON)

• Low Threshold Voltage

• Logic Level Compatible

• Small, SOT-563 Surface Mount Package

Notes:

(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2

APPLICATIONS:

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Powered Portable Devices

SOT-563 CASE

R2 (27-January 2011)

www.centr a lsemi.com

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