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ZTX600 Arkusz danych(PDF) 1 Page - Diodes Incorporated |
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ZTX600 Arkusz danych(HTML) 1 Page - Diodes Incorporated |
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1 / 3 page  NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 JUNE 94 FEATURES * 160 Volt VCEO * 1 Amp continuous current * Gain of 5K at IC=1 Amp *Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX600 ZTX601 UNIT Collector-Base Voltage VCBO 160 180 V Collector-Emitter Voltage VCEO 140 160 V Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 4A Continuous Collector Current IC 1A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/ °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. Collector-Base Breakdown Voltage V(BR)CBO 160 180 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 140 160 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=100µA Collector Cut-Off Current ICBO 0.01 10 0.01 10 µ A µ A µ A µ A VCB=140V VCB=160V VCB=140V,T==100°C VCB=160V,T==100°C Emitter Cut-Off Current IEBO 0.1 0.1 µ A VEB=8V Colllector-Emitter Cut-Off Current ICES 10 10 µ A µ A VCES=140V VCES=160V Collector-Emitter Saturation Voltage VCE(sat) 0.75 0.85 1.1 1.2 0.75 0.85 1.1 1.2 V V IC=0.5A, IB=5mA* IC=1A, IB=10mA* Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 1.7 1.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 1.5 1.7 1.5 1.7 V IC=1A, VCE=5V* E-Line TO92 Compatible ZTX600 ZTX601 3-206 ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. Static Forward Current Transfer Ratio Group A Group B hFE 1K 2K 1K 100K 1K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* 1K 2K 1K 2K 5K 3K 20K 1K 2K 1K 2K 5K 3K 20K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* 5K 10K 5K 10K 20K 10K 100K 5K 10K 5K 10K 20K 10K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* Transition Frequency fT 150 250 150 250 MHz IC=100mA, VCE=10V f=20MHz Input Capacitance Cibo 60 90 60 90 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 10 15 10 15 pF VCE=10V, f=1MHz Switching Times ton 0.75 0.75 µ s IC=0.5A, VCE=10V IB1=IB2=0.5mA toff 2.2 2.2 µ s *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% The maximum permissible operational temperature can be obtained from this graph using the following equation Tamb(max) = Power (max ) − Power (act) 0.0057 +25° C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit C B E ZTX600 ZTX601 Voltage Derating Graph VCE - Collector-Emitter Voltage (Volts) 1.0 0.8 0.6 0.4 0 0.2 R5 = 5KΩ 1 10 100 DC Conditions R5 = 50KΩ R5 = ∞ 200 R5 = 1MΩ 3-207 |
Podobny numer części - ZTX600 |
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Podobny opis - ZTX600 |
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