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ZVP3306F Arkusz danych(PDF) 2 Page - Diodes Incorporated

Numer części ZVP3306F
Szczegółowy opis  SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
PDF  2 Pages
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZVP3306F Arkusz danych(HTML) 2 Page - Diodes Incorporated

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D
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
*60 Volt VDS
*RDS(on)=14Ω
PARTMARKING DETAIL – ML
COMPLEMENTARY TYPE – ZVN3306F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
-60
V
Continuous Drain Current at Tamb=25°C
ID
-90
mA
Pulsed Drain Current
IDM
-1.6
A
Gate Source Voltage
VGS
±
20
V
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
-60
V
ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
-1.5
-3.5
V
ID=-1mA, VDS= VGS
Gate-Body Leakage
IGSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-0.5
-50
µ
A
µ
A
VDS=-60 V, VGS=0V
VDS=-48 V, VGS=0V, T=125°C(2)
On-State Drain Current(1)
ID(on)
-400
mA
VDS=-18 V, VGS=-10V
Static Drain-Source On-State
Resistance (1)
RDS(on)
14
Ω
VGS=-10V, ID=-200mA
Forward Transconductance
(1)(2)
gfs
60
mS
VDS=-18V, ID=-200mA
Input Capacitance (2)
Ciss
50
pF
Common Source Output
Capacitance (2)
Coss
25
pF
VDS=-18V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2) Crss
8pF
Turn-On Delay Time (2)(3)
td(on)
8ns
VDD≈-18V, ID=-200mA
Rise Time (2)(3)
tr
8ns
Turn-Off Delay Time (2)(3)
td(off)
8ns
Fall Time (2)(3)
tf
8ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVP3306F
TYPICAL CHARACTERISTICS
Normalised RDS(on) and VGS(th) vs Temperature
Junction Temperature (°C)
-40 -20 0 20 40 60 80
120
100
140 160
2.0
1.0
0.6
ID=0.37A
0-2
-4
-6
-8
-10
-1.0
-0.8
-0.6
-0.4
0
-0.2
Saturation Characteristics
On-resistance vs Drain Current
ID-
Drain Current (mA)
-6V
-7V
-16V
-9V
VGS=-10V
ID=-1mA
VGS=VDS
-10V
-6
0
-2
-4
-8
0-2
-4
-6
-8
-10
-10
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
ID=
-400mA
-200mA
-100mA
2.6
180
10
1
100
-10
-100
-1000
VGS=-5V
-15V
-20V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
VGS=
VDS - Drain Source
Voltage (Volts)
-6
-8
-10
-14
-16
-12
-4
-2
00.5
1.0
1.5
0
Q-Gate Charge (nC)
40
30
20
0
10
50
60
0
-10
-20
-30
-40
-50
-60
-70
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
Note:VGS=0V
f=1MHz
Ciss
Coss
Crss
/
5
1
2
Gate charge v gate-source voltage
VDS=
-20V
Note:ID=- 0.2A
-40V -60V
ZVP3306F
G
S
SOT23
3 -434
3 - 435



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