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MIC44F18 Arkusz danych(PDF) 13 Page - Micrel Semiconductor |
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MIC44F18 Arkusz danych(HTML) 13 Page - Micrel Semiconductor |
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13 / 17 page ![]() Micrel, Inc. MIC44F18/19/20 February 2011 13 M9999-020111 Figure 6C. Maximum Driver Power Dissipation Propagation Delay and Delay Matching and Other Timing Considerations Fast propagation delay between the input and output drive waveform is desirable. It improves overcurrent protection by decreasing the response time between the control signal and the MOSFET gate drive. Minimizing propagation delay also minimizes phase shift errors in power supplies with wide bandwidth control loops. Care must be taken to insure the input signal pulse width is greater than the minimum specified pulse width. An input signal that is less than the minimum pulse width may result in no output pulse or an output pulse whose width is significantly less than the input. Decoupling and Bootstrap Capacitor Selection Decoupling capacitors are required for proper operation by supplying the charge necessary to drive the external MOSFETs as well as minimizing the voltage ripple on the supply pins. Ceramic capacitors are recommended because of their low impedance and small size. Z5U type ceramic capacitor dielectrics are not recommended due to the large change in capacitance over temperature and voltage. A minimum value of 0.1µf is required for each of the capacitors, regardless of the MOSFETs being driven. Larger MOSFETs may require larger capacitance values for proper operation. The voltage rating of the capacitors depends upon the supply voltage, ambient temperature and the voltage derating used for reliability. Placement of the decoupling capacitors is critical. The bypass capacitor for VDD should be placed as close as possible between the VDD and VSS pins. The etch connections must be short, wide and direct. The use of a ground plane to minimize connection impedance is recommended. Refer to the section on layout and component placement for more information. Grounding, Component Placement and Circuit Layout Nanosecond switching speeds and ampere peak currents in and around the MOSFET driver requires proper placement and trace routing of all components. Improper placement may cause degraded noise immunity, false switching and excessive ringing. Figure 7 shows the critical current paths when the driver outputs go high and turn on the external MOSFETs. It also helps demonstrate the need for a low impedance ground plane. Charge needed to turn-on the MOSFET gates comes from the decoupling capacitors CVDD. Current in the gate driver flows from CVDD through the internal driver, into the MOSFET gate and out the source. The return connection back to the decoupling capacitor is made through the ground plane. Any inductance or resistance in the ground return path causes a voltage spike or ringing to appear on the source of the MOSFET. This voltage works against the gate drive voltage and can either slow down or turn off the MOSFET during the period when it should be turned on. IN Figure 7. Critical Current Paths for High Driver Outputs |
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