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ZXMC6A09DN8TC Arkusz danych(PDF) 4 Page - Diodes Incorporated

Numer części ZXMC6A09DN8TC
Szczegółowy opis  COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMC6A09DN8TC Arkusz danych(HTML) 4 Page - Diodes Incorporated

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ZXMC6A09DN8
ISSUE 4 - MAY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
60
V
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
1.0
AVDS=60V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS= 20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
1.0
V
I
D
=250 A, VDS=VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.045
0.070
VGS=10V, ID=8.2A
VGS=4.5V, ID=7.4A
Forward Transconductance
(1)(3)
gfs
15
S
VDS=15V,ID=8.2A
DYNAMIC
(3)
Input Capacitance
Ciss
1407
pF
VDS=40V, VGS=0V,
f=1MHz
Output Capacitance
Coss
121
pF
Reverse Transfer Capacitance
Crss
59
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
4.9
ns
VDD =30V, ID=1.0A
RG 6.0Ω,VGS=10V
Rise Time
tr
3.3
ns
Turn-Off Delay Time
td(off)
28.5
ns
Fall Time
tf
11.0
ns
Gate Charge
Qg
12.4
nC
VDS=15V,VGS=5V,
ID=3.5A
Total Gate Charge
Qg
24.2
nC
VDS=15V,VGS=10V,
ID=3.5A
Gate-Source Charge
Qgs
5.2
nC
Gate-Drain Charge
Qgd
3.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
VSD
0.85
0.95
V
TJ=25°C, IS=6.6A,
VGS=0V
Reverse Recovery Time
(3)
trr
26.3
ns
TJ=25°C, IF=3.5A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Qrr
26.6
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.



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