Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

Preview PDF HTML

ZXMN6A09DN8 Arkusz danych(PDF) 4 Page - Diodes Incorporated

Numer części ZXMN6A09DN8
Szczegółowy opis  60V SO8 N-channel enhancement mode MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMN6A09DN8 Arkusz danych(HTML) 4 Page - Diodes Incorporated

  ZXMN6A09DN8 Datasheet HTML 1Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 2Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 3Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 4Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 5Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 6Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 7Page - Diodes Incorporated ZXMN6A09DN8 Datasheet HTML 8Page - Diodes Incorporated  
Zoom Inzoom in Zoom Outzoom out
 4 / 8 page
background image
ZXMN6A09DN8
Issue 6 - January 2007
4
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown voltage V(BR)DSS
60
V
ID= 250 A, VGS=0V
Zero gate voltage drain current
IDSS
1
AVDS= 60V, VGS=0V
Gate-body leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-source threshold voltage
VGS(th)
1.0
3.0
V
ID= 250 A, VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
RDS(on)
0.040
VGS= 10V, ID= 8.2A
0.060
VGS= 4.5V, ID = 7.4A
Forward transconductance(*)(‡)
gfs
15
S
VDS= 15V, ID= 8.2A
Dynamic(‡)
Input capacitance
Ciss
1407
pF
VDS= 40V, VGS=0V
f=1MHz
Output capacitance
Coss
121
pF
Reverse transfer capacitance
Crss
59
pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time
td(on)
4.9
ns
VDD= 15V, ID= 3.5A
RG≅6.0 , VGS= 10V
Rise time
tr
5.0
ns
Turn-off delay time
td(off)
25.3
ns
Fall time
tf
4.6
ns
Total gate charge
Qg
12.4
nC
VDS= 15V, VGS= 5V
ID= 3.5A
Total gate charge
Qg
24.2
nC
VDS= 15V, VGS= 5V
ID= 3.5A
Gate-source charge
Qgs
5.2
nC
Gate drain charge
Qgd
3.5
nC
Source-drain diode
Diode forward voltage(*)
VSD
0.85
0.95
V
Tj=25°C, IS= 6.6A,
V
GS=0V
Reverse recovery time(‡)
trr
26.3
ns
Tj=25°C, IS= 3.5A,
di/dt=100A/ s
Reverse recovery charge(‡)
Qrr
26.6
nC



Html Pages

1 2 3 4 5 6 7 8


Arkusz danych Pobierz

Go To PDF Page


Link URL



Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Link do karty katalogowej    |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com