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ZXMP3F30FH Arkusz danych(PDF) 2 Page - Diodes Incorporated

Numer części ZXMP3F30FH
Szczegółowy opis  30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMP3F30FH Arkusz danych(HTML) 2 Page - Diodes Incorporated

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ZXMP3F30FH
Absolute Maximum Ratings
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGS
±20
V
Continuous Drain current @ VGS= -10V; TA=25°C
(b)
@ VGS= -10V; TA=70°C
(b)
@ VGS= -10V; TA=25°C
(a)
@ VGS= -10V; TL=25°C
(d)
ID
-3.4
-2.7
-2.8
-4.0
V
Pulsed Drain current
(c)
IDM
-15.3
A
Continuous Source current (Body diode)
(b)
IS
-2
A
Pulsed Source current (Body diode)
(c)
ISM
-15.3
A
Power dissipation at TA =25°C
(a)
Linear derating factor
PD
0.95
7.6
W
mW/
°C
Power dissipation at TA =25°C
(b)
Linear derating factor
PD
1.4
11.2
W
mW/
°C
Power dissipation at TL =25°C
(d)
Linear derating factor
PD
1.96
15.7
W
mW/
°C
Operating and storage temperature range
Tj, Tstg
-55 to 150
°C
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to ambient
(a)
RθJA
131
°C/W
Junction to ambient
(b)
RθJA
89
°C/W
Junction to lead
(d)
RθJL
63.77
°C/W
NOTES:
(a)
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b)
Mounted on FR4 PCB measured at t
≤ 10 sec.
(c)
Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d)
Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 - August 2008
2
© Diodes Incorporated
www.zetex.com
www.diodes.com



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