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CBS05F30 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor

Numer części CBS05F30
Szczegółowy opis  TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
PDF  4 Pages
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

CBS05F30 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor

  CBS05F30 Datasheet HTML 1Page - Toshiba Semiconductor CBS05F30 Datasheet HTML 2Page - Toshiba Semiconductor CBS05F30 Datasheet HTML 3Page - Toshiba Semiconductor CBS05F30 Datasheet HTML 4Page - Toshiba Semiconductor  
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CBS05F30
2010-05-11
2
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.



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