ZXTP25015DFH datasheet(4/6 Pages) DIODES

4 / 6 page

ZXTP25015DFH

Issue 2 - March 2008

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown

voltage

BVCBO

-15

-35

IC = -100 A

Collector-emitter breakdown

voltage (base open)

BVCEO

-15

-30

IC = -10mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

Emitter-base breakdown

voltage

BVEBO

-7

-8.4

IE = -100 A

Emitter-collector breakdown

voltage (base open)

BVECO

-3

-8.2

IE = -100 A

(*)

Collector-base cut-off current

ICBO

<-1

-50

-20

VCB = -12V

VCB = -12V, Tamb= 100°C

Emitter-base cut-off current

IEBO

<-1

-50

VEB = -5.6V

Collector-emitter saturation

voltage

VCE(sat)

-45

-55

IC = -1A, IB = -100mA

(*)

-110

-150

IC = -1A, IB = -10mA

(*)

-130

-175

IC = -2A, IB = -40mA

(*)

-160

-210

IC = -4A, IB = -200mA

(*)

-165

-220

IC = -5A, IB = -500mA

(*)

Base-emitter saturation

voltage

VBE(sat)

-930

-1050

IC = -4A, IB = -200mA

(*)

Base-emitter turn-on voltage

VBE(on)

-810

-900

IC = -4A, VCE = -2V

(*)

Static forward current transfer

ratio

hFE

300

450

900

IC = -10mA, VCE = -2V

(*)

200

315

IC = -1A, VCE = -2V

(*)

145

IC = -4A, VCE = -2V

(*)

IC = -10A, VCE = -2V

(*)

Transition frequency

295

MHz

IC = -50mA, VCE = -10V

f = 100MHz

Output capacitance

COBO

VCB = -10V, f = 1MHz

(*)

Delay time

33.8

VCC = -15V.

IC = -750mA,

IB1 = IB2= -15mA

Rise time

43.5

Storage time

196

Fall time

51.7

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