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Zakładka z wyszukiwarką danych komponentów |
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2SC5232 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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2SC5232 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5232 2003-03-27 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application · Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA · Large collector current: IC = 500 mA (max) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) |
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