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6N10G-TN3-R Arkusz danych(PDF) 2 Page - Unisonic Technologies |
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6N10G-TN3-R Arkusz danych(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() 6N10 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-486.a ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous ID 6.5 A Continuous Drain Current Pulsed IDM 8.0 A Repetitive Avalanche Energy (Duty Cycle ≤1%) L = 0.1 mH EAR 1.25 mJ Power Dissipation PD 16 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 100 °C/W Junction to Case θJC 7.5 °C/W |
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