BTC1510F3

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R223-002.a

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

150

V

Collector-Emitter Voltage

150

V

Emitter-Base Voltage

5

V

DC

10

Collector Current

Pulse(Note 2)

15

A

2

Collector Dissipation

60

W

Junction Temperature

150

℃

Storage Temperature

-55 ~ +150

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

150

V

Collector-Emitter Breakdown Voltage

150

V

2.8

Base-Emitter Turn-On Voltage (Note)

4.5

V

3

V

Collector Cutoff Current

200

µA

Collector Cutoff Current

200

µA

Emitter Cutoff Current

2

mA

ON CHARACTERISTICS

2

20

K

DC Current Gain (Note)

100

Base-Emitter Saturation Voltage(Note)

2

V

1.5

3

Collector-Emitter Saturation Voltage

(Note)

2

V

Note: Pulse test: Pulse Width≦380

μs, Duty Cycle≦2%

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.