IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFE 39N90

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

30

45

S

C

iss

13400

pF

C

oss

V

1230

pF

C

rss

320

pF

t

d(on)

45

ns

t

r

V

68

ns

t

d(off)

R

125

ns

t

f

30

ns

Q

g(on)

375

nC

Q

gs

V

75

nC

Q

gd

190

nC

R

thJC

0.22

K/W

R

thCK

0.07

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

39

A

I

SM

Repetitive;

154

A

Note 1

V

SD

I

1.3

V

Note 2

t

rr

I

250

ns

Q

RM

2

µC

I

RM

9A

ISOPLUS-227 B

Please see IXFN39N90 data sheet

for characteristic curves.

Notes: 1. Pulse width limited by T

JM.

2. Pulse test, t

≤ 300 ms, duty cycle d ≤ 2%.

3.

I