IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 6N100Q

IXFT 6N100Q

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

3

5

S

C

iss

2200

pF

C

oss

V

GS

= 0 V, V

180

pF

C

rss

30

pF

t

d(on)

10

ns

t

r

V

GS

= 10 V, V

15

ns

t

d(off)

R

22

ns

t

f

12

ns

Q

g(on)

48

nC

Q

gs

V

GS

= 10 V, V

17

nC

Q

gd

22

nC

R

thJC

0.7

K/W

R

thCK

(TO-247)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

9

A

I

SM

Repetitive; pulse width limited by T

JM

24

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

250

ns

Q

RM

I

0.75

µC

I

RM

7.5

A

TO-268 Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205

0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P

3.55

3.65

.140

.144

Q

5.89

6.40

0.232

0.252

R

4.32

5.49

.170

.216

S

6.15

BSC

242

BSC

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

TO-247 AD (IXFH) Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain