IXFN80N48 datasheet(1/2 Pages) IXYS

Numer części	IXFN80N48

Szczegółowy opis	HiPerFET Power MOSFETs Single Die MOSFET

PDF	2 Pages

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Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

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Features

International standard packages

miniBLOC, with Aluminium nitride

isolation

Low R

DS (on) HDMOS

TM

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

Temperature and lighting controls

Advantages

Easy to mount

Space savings

High power density

Symbol

TestConditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ. max.

V

DSS

V

GS = 0 V, ID = 3 mA

480

V

GH(th)

V

DS = VGS, ID = 8 mA

2

4

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200

nA

I

DSS

V

DS = VDSS

T

J =

25°C

100

mA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

45 m W

Pulse test, t £ 300 ms,

duty cycle d £ 2 %

Symbol

TestConditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

480

V

DGR

T

J = 25°C to 150°C; RGS = 1 MW

480

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C, Chip capability80

A

I

DM

T

C = 25°C, pulse width limited by TJM

320

A

I

AR

T

C = 25°C80

A

E

AR

T

C = 25°C64

mJ

E

AS

T

C = 25°C6

J

dv/dt

I

S

£ I

DM, di/dt £ 100 A/ms, VDD £ VDSS,

5

V/ns

T

J £ 150°C, RG = 2 W

P

D

T

C = 25°C

700

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL £ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

HiPerFETTM

Power MOSFETs

Single Die MOSFET

N-ChannelEnhancementMode

Avalanche Rated, High dv/dt, Low t

rr

98724 (05/31/00)

D

S

G

S

G

S

D

miniBLOC,SOT-227B(IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal of miniBLOC can be used

as Main or Kelvin Source

IXFN 80N48

V

DSS

= 480 V

I

D25

= 80 A

R

DS(on)

= 45 mW

Preliminary data sheet

Podobny numer części - IXFN80N48

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IXYS Corporation	IXFN80N50	126Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET
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IXFN80N48 Arkusz danych(PDF) 1 Page - IXYS Corporation

IXFN80N48 Arkusz danych(HTML) 1 Page - IXYS Corporation

Podobny numer części - IXFN80N48

Podobny opis - IXFN80N48

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