IXFP05N100M datasheet(4/4 Pages) IXYS

Numer części	IXFP05N100M

Szczegółowy opis	High Voltage HiperFET

PDF	4 Pages

Scroll/Zoom	100%

Producent	IXYS [IXYS Corporation]

Strona internetowa	http://www.ixys.com

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IXFP05N100M

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: T_05N100M(1TM)7-29-08

Fig. 11. Maximum Transient Thermal Impedance

0.1

1.0

10.0

0.0001

0.001

0.01

0.1

100

Pulse Width - Seconds

Fig. 7. Transconductance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 8. Forward Voltage Drop of

Intrinsic Diode

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 9. Gate Charge

234

QG - NanoCoulombs

VDS = 500V

I D = 1A

I G = 1mA

Fig. 10. Capacitance

100

1,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

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