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TLRH30TP Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TLRH30TP Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
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3 / 9 page ![]() TL(RH,RMH,SH,OH,YH)30TP(F) 2009-03-09 3 Electrical and Optical Characteristics (Ta = 25°C) Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR λd λP Δλ Product Name Min Typ. Max Typ. Typ. IF Min Typ. IF Typ. Max IF Max VR TLRH30TP(F) ― 630 ― 644 13 20 272 680 20 1.9 2.4 20 50 4 TLRMH30TP(F) ― 626 ― 636 13 20 476 950 20 1.9 2.4 20 50 4 TLSH30TP(F) ― 613 ― 623 13 20 476 1300 20 2.0 2.4 20 50 4 TLOH30TP(F) ― 605 ― 612 13 20 476 1600 20 2.0 2.4 20 50 4 TLYH30P(F) 581 587 595 590 13 20 476 1350 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (Soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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