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BFP450 Arkusz danych(PDF) 8 Page - Infineon Technologies AG

Numer części BFP450
Szczegółowy opis  High Linearity Low Noise Si NPN RF Transistor
PDF  27 Pages
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP450 Arkusz danych(HTML) 8 Page - Infineon Technologies AG

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BFP450
Maximum Ratings
Data Sheet
8
Revision 1.0, 2010-10-22
2
Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 1
Maximum Ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Max.
Collector emitter voltage
V
CEO
Open base
–4.5
V
T
A = 25 °C
–4.1
V
T
A = -55 °C
Collector emitter voltage
V
CES
–
15
V
Emitter / base shortened
Collector base voltage
V
CBO
–
15
V
Open emitter
Emitter base voltage
V
EBO
–
1.5
V
Open collector
Collector current
I
C
–170
mA
–
Base current
I
B
–10
mA
–
Total power dissipation1)
1)T
S is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
P
tot
–500
mW
T
S ≤ 90 °C
Junction temperature
T
J
–150
°C
–
Storage temperature
T
Stg
-65
150
°C
–



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