Click To Buy

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

www.micross.com/distribution.aspx

FEATURES 

DIRECT REPLACEMENT FOR SILICONIX J212 

HIGH GAIN  

HIGH INPUT IMPEDANCE 

LOW INPUT CAPACITANCE 

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature ‐55°C to +150°C 

Operating Junction Temperature ‐55°C to +135°C 

Maximum Power Dissipation 

Continuous Power Dissipation  

360mW 

Derating over temperature 

3.27 mW/°C 

MAXIMUM CURRENT

Gate Current (Note 1) 

10mA 

MAXIMUM VOLTAGES 

Gate to Drain Voltage or  Gate to Source Voltage  ‐25V 

  

LSJ212 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Gate to Source Breakdown Voltage ‐25 

‐‐ 

‐‐ 

V 

Gate to Source Cutoff Voltage ‐4 

‐‐ 

‐6 

Drain to Source Saturation Current (Note 2) 

15 

‐‐ 

40 

mA 

Gate Reverse Current (Note 3) 

‐‐ 

‐‐ 

‐100 

pA 

Gate Operating Current (Note 3) 

‐‐ 

‐10 

‐‐ 

pA 

VDS = 10V,  ID = 1mA 

Drain to Source On Resistance 

‐‐ 

‐‐ 

50 Ω 

IG = 1mA,  VDS = 0V 

 

 

    

 

LSJ212 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Forward Transconductance 

7000 

‐‐ 

12000 

µmho 

VDS = 15V,   VGS = 0V , f = 1kHz 

Output Conductance 

‐‐ 

‐‐ 

200 

Input Capacitance 

‐‐ 

4 

‐‐ 

pF 

Reverse Transfer Capacitance 

‐‐ 

1 

‐‐ 

Equivalent Noise Voltage 

‐‐ 

10 

‐‐ 

nV/√Hz 

 

 

    

 

LSJ212 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 

SYMBOL 

CHARACTERISTIC  

UNITS 

CONDITIONS 

Turn On Time 

2  

 

ns 

 

See Switching Circuit 

Turn On Rise Time 

2 

Turn Off Time 

6 

Turn Off Fall Time 

15 

  

 

  

 

  

 

  

 

  

 

LSJ212

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix J212

The LSJ212 is a n-channel JFET General Purpose

amplifier with low noise and low leakage.

The SOT-23 package is well suited for cost sensitive

applications and mass production.

(See Packaging Information).

LSJ212 Applications:

General Purpose Amplifiers

UHV / VHF Amplifiers

Mixers

Oscillators

LSJ212 Benefits:

High gain

Low Leakage

Low Noise

Micross Components Europe

Available Packages:

LSJ212 in SOT-23

LSJ212 in bare die.

Please contact Micross for full

package and die dimensions

Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ212 serviceability may be impaired.  

Note 2 ‐ Pulse test duration = 2ms 

Note 3 – Approximately doubles for every 10

Tel: +44 1603 788967

SOT-23 (Top View)