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LSU421 Arkusz danych(PDF) 1 Page - Micross Components |
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LSU421 Arkusz danych(HTML) 1 Page - Micross Components |
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1 / 1 page  Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES HIGH INPUT IMPEDANCE IG = 0.25pA MAX HIGH GAIN gfs = 120µmho MIN LOW POWER OPERATION VGS(OFF) = 2V MAX ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS |∆V GS1‐2 /∆T|max. DRIFT VS. TEMPERATURE 10 µV/°C VDG=10V, ID=30µA TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 10 mV VDG=10V, ID=30µA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Breakdown Voltage 40 60 ‐‐ V VDS = 0 IG =1nA BVGGO Gate‐To‐Gate Breakdown 40 ‐‐ ‐‐ V IG = 1µA ID = 0 IS= 0 YfSS TRANSCONDUCTANCE Full Conduction 300 ‐‐ 1500 µmho VDS = 10V VGS = 0V f = 1kHz YfS Typical Operation 120 200 350 µmho VDG = 10V ID = 30µA f = 1kHz IDSS DRAIN CURRENT Full Conduction 60 ‐‐ 1000 µA VDS = 10V VGS = 0V VGS(off) GATE VOLTAGE Pinchoff voltage ‐‐ ‐‐ 2.0 V VDS = 10V ID = 1nA VGS Operating Range ‐‐ ‐‐ 1.8 V VDG = 10V ID = 30µA IGmax. GATE CURRENT Operating ‐‐ ‐‐ .25 pA VDG = 10V ID = 30µA ‐IGmax. High Temperature ‐‐ ‐‐ 250 pA TA = +125°C IGSSmax. At Full Conduction ‐‐ ‐‐ 1.0 pA VDS = 0V VGS = 20V ‐IGSSmax. High Temperature ‐‐ ‐‐ 1.0 nA TA = +125°C YOSS OUTPUT CONDUCTANCE Full Conduction ‐‐ ‐‐ 10 µmho VDS = 10V VGS = 0V YOS Operating ‐‐ 0.1 3.0 µmho VDG = 10V ID = 30µA CMR COMMON MODE REJECTION ‐20 log | ∆V GS1‐2/ ∆VDS| ‐‐ 90 ‐‐ dB ∆VDS = 10 to 20V ID = 30µA ‐20 log | ∆V GS1‐2/ ∆VDS| ‐‐ 90 ‐‐ dB ∆VDS = 5 to 10V ID = 30µA NF NOISE Figure ‐‐ ‐‐ 1 dB VDG = 10V ID = 30µA RG = 10MΩ f = 10Hz en Voltage ‐‐ 20 70 nV/√Hz VDG = 10V ID = 30µA f = 10Hz ‐‐ 10 ‐‐ VDG = 10V ID = 30µA f = 1KHz CISS CAPACITANCE Input ‐‐ ‐‐ 3.0 pF VDS= 10V VGS = 0 f = 1MHz CRSS Reverse Transfer ‐‐ ‐‐ 1.5 pF The LSU421 is a high input impedance Monolithic Dual N-Channel JFET LSU421 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET LSU421 Applications: Ultra Low Input Current Differential Amps High-Speed Comparators Impedance Converters The LSU421 monolithic dual n-channel JFET is designed to provide very high input impedance for differential amplification and impedance matching. Among its many unique features, this series offers operating gate current specified at -250 fA. The LSU421 is a direct replacement for discontinued Siliconix U421. The 6 Pin SOT-23 package provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information). Linear Systems replaces discontinued Siliconix U421 Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired Available Packages: LSU421 in SOT-23 LSU421 available as bare die Please contact Micross for full package and die dimensions Email: chipcomponents@micross.com Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution |
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