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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BCP157 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCP157 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual BCP157 PNP Silicon Medium Power Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente Features ° Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. Parameter VCBO VCEO VEBO PC Tj Tstg -80 V V V A(DC) °C °C -60 -5 -3 IC A(Pulse) -6 ∗1 ∗2 0.5 2W W 150 −55~+150 Symbol Limits Unit ° Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage 2 VCE(Sat)2 Base-emitter saturation voltage Sat Collector-emitter saturation voltage 1 Output capacitance Current Gain - Bandwidth Product Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VBE(Sat) VCE(sat)1 VBE(On) Cob Min. -80 -60 -5 − − -0.9 − − − − − − − − − -150 -0.8 − − − − 0.1 0.1 -1.25 -300 -1.0 V VCE=-2V, IC=-1A 30 V IC =−100µA, IE=0 IC =−10mA, IB=0 IE =−100 µA, IC=0 VCB =−60V, IE=0 VEB =−4V, IC=0 IC=-1A, IB=-100mA IC =−1A,IB=-100mA VCE =−5V, IC=-100mA, f=100MHz VCB =−10V, IE=0A, f=1MHz V V µA µA V mV MHz pF Typ. Max. Unit Conditions 1. -60Volt V CEO 2. 3 Amp continuous current 3. Low saturation voltage SOT-89 1.BASE 2.COLLECTOR 3.EMITTER fT Symbol A b b1 c D D1 E E1 e e1 L Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 2.900 0.900 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 3.100 1.100 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.114 0.035 Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.122 0.043 Dimensions In Millimeters Dimensions In Inches 0.060TYP 1.500TYP D D1 C A b b1 e e1 01-Jun-2002 Rev. A Page 1 of 2 Base-emitter saturation voltage On Switching Time Current Gain hFE4 hFE1 hFE2 hFE3 70 200 300 VCE=-2V, IC=-1A 200 170 150 100 80 40 VCE=-2V, IC=-2A VCE=-2V, IC=-50mA VCE=-2V, IC=-1A VCE=-2V, IC=-500mA VCC=-10V, IC=-500mA, IB1=IB2=-50mA Note: Measured under pulse condition. Pulse width<300us, Duty cycle<2% toff ton − − − − 40 450 ns 100 140 − -450 -600 mV IC=-3A,IB=-300mA Spice parameter data is available upon urquest for this device. |
Podobny numer części - BCP157 |
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Podobny opis - BCP157 |
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