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SCG3019 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Numer części SCG3019
Szczegółowy opis  N-Channel Enhancement MOSFET
PDF  4 Pages
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Producent  SECOS [SeCoS Halbleitertechnologie GmbH]
Strona internetowa  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SCG3019 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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SCG3019
N-Channel Enhancement MOSFET
Elektronische Bauelemente
04-May-2010 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
SOT-523
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low on-resistance.
Fast switching speed.
Low voltage drive makes this device ideal for portable equipment.
Easily designed drive circuits.
Easy to parallel.
EQUIVALENT CIRCUIT
MAXIMUM RATINGS (TA=25℃ unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
0.1
A
Total Power Dissipation
PD
0.15
W
Operating Junction Temperature Range
TJ
150
°C
Operating Storage Temperature Range
TSTG
-55~150
°C
Thermal Resistance, Junction to Ambient
RθJA
833
°C / W
DEVICE MARKING
KN
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
1.50
1.70
K
0.30
0.50
B
0.75
0.95
M
---
10
o
C
0.60
0.80
N
---
10
o
D
0.23
0.33
S
1.50
1.70
G
0.50BSC
J
0.10
0.20


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