SCS751DS datasheet(1/2 Pages) SECOS

Numer części	SCS751DS

Szczegółowy opis	30 mA, 40 V Plastic-Encapsulate Schottky Diodes

PDF	2 Pages

Scroll/Zoom	100%

Producent	SECOS [SeCoS Halbleitertechnologie GmbH]

Strona internetowa	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

SCS751DS

30 mA, 40 V

Plastic-Encapsulate Schottky Diodes

10-Nov-2009 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

Silicon epitaxial planar

FEATURES

Small surface mounting type

Low reverse current and low forward voltage

High reliability

APPLICATION

High speed switching For Detection

For portable equipment: (i.e. Mobile phone, MP3, MD, CD-ROM,

DVD-ROM, Note book PC, etc)

MARKING :

Cathode -

5

+Anode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at TA = 25°C

PARAMETER

SYMBOL

RATINGS

UNIT

Peak Reverse Voltage

VRM

40

V

DC Reverse Voltage

VR

30

V

Mean Rectifying Current

Io

30

mA

Peak Forward Surge Current

IFSM

150

mA

Junction, Storage Temperature

TJ, TSTG

+125, -40 ~ +125

°C

ELECTRICAL RATING at TA = 25°C

PARAMETERS

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Forward Voltage

VF

0.37

V

IF = 1mA

Reverse Current

IR

0.5

µ

A

VR = 30V

Capacitance between terminals

CT

2

pF

VR = 30V, f = 1MHZ

DFNWB

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.55

0.65

E

0.15

0.35

B

0.95

1.05-

F

0.05REF

C

0.4

0.5

G

0.4

0.6

D

0

0.05

H

0.65TYP

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