SSG4935P datasheet(2/4 Pages) SECOS

2 / 4 page

SSG4935P

P-Ch Enhancement Mode Power MOSFET

-7.8 A, -30 V, RDS(ON) 21 m

Elektronische Bauelemente

25-Aug-2010 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise specified)

PARAMETER

SYMBO

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

STATIC

Gate Threshold Voltage

VGS(th)

-1

-3

VDS= VGS, ID= -250μA

Gate-Body Leakage Current

IGSS

±100

VDS= 0V, VGS= ±25V

Zero Gate Voltage Drain Current

IDSS

-1

μA

VDS= -24V, VGS= 0V

-5

μA

VDS= -24V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(on)

-40

VDS= -5V, VGS= -10V

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -10V, ID= -7.8A

VGS= -4.5V, ID= -6.0A

Forward Transconductance

gfs

VDS= -10V, ID= -7.8A

Diode Forward Voltage

VSD

-0.7

-1.2

IS= -1.7A, VGS= 0V

DYNAMIC

Total Gate Charge

ID= -7.8A

VDS= -15V

VGS= -5V

Gate-Source Charge

Qgs

5.2

Gate-Drain Charge

Qgd

5.8

Turn-On Delay Time

Td(on)

VDD= -15V

ID= -1A

VGEN= -10V

RL= 6Ω

Rise Time

Turn-Off Delay Time

Td(off)

Fall Time

Notes

Pulse test：PW ≦ 300

μs duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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