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SSP7442N Arkusz danych(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Numer części SSP7442N
Szczegółowy opis  N-Channel Enhancement MOSFET
PDF  2 Pages
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Producent  SECOS [SeCoS Halbleitertechnologie GmbH]
Strona internetowa  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSP7442N Arkusz danych(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SSP7442N
20 A, 40 V, RDS(ON) 9 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
28-Jul-2010 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBO MIN TYP MAX UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS = VGS, ID = 250μA
Gate-Body Leakage
IGSS
-
-
±
100
nA
VDS = 0V, VGS= 20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS = 32V, VGS= 0V
-
-
25
VDS = 32V, VGS= 0V, TJ=55°C
On-State Drain Current
A
ID(ON)
34
-
-
A
VDS = 5V, VGS= 10V
Drain-Source On-Resistance
A
RDS(ON)
-
-
9
mΩ
VGS= 10V, ID = 7.5A
-
-
12
VGS= 4.5V, ID = 7A
Forward Transconductance
A
gFS
-
22
-
S
VDS= 15V,,ID = 7.5A
Diode Forward Voltage
VSD
-
1.1
-
V
IS= 2.1A, VGS= 0V
Dynamic
b
Total Gate Charge
Qg
-
4.0
-
nC
ID= 7.5A
VDS= 15V
VGS= 4.5V
Gate-Source Charge
Qgs
-
1.1
-
Gate-Drain Charge
Qgd
-
1.4
-
Turn-On Delay Time
Td(ON)
-
16
-
nS
ID= 34A, VDD= 25V
VGEN= 10V
RL= 25Ω
Rise Time
Tr
-
5
-
Turn-Off Delay Time
Td(OFF)
-
23
-
Fall Time
Tf
-
3
-
Notes
a.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.



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