SSP7481P datasheet(1/2 Pages) SECOS

Numer części	SSP7481P

Szczegółowy opis	P-Channel Enhancement MOSFET

PDF	2 Pages

Scroll/Zoom	100%

Producent	SECOS [SeCoS Halbleitertechnologie GmbH]

Strona internetowa	http://www.secosgmbh.com

Logo

1 / 2 page

SSP7481P

-6.7 A, -80 V, RDS(ON) 75 m

P-Channel Enhancement MOSFET

Elektronische Bauelemente

29-Jul-2010 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process

to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in

portable and battery-powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

FEATURES



Low RDS(on) provides higher efficiency and extends battery life.



Low thermal impedance copper leadframe SOP-8PP saves board

space.



Fast switching speed.



High performance trench technology.

PRODUCT SUMMARY

VDS(V)

RDS(on) (m

ID(A)

-80

75@VGS= -10V

-6.7

90@VGS= -4.5V

-6.1

ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDS

-80

V

Gate-Source Voltage

VGS

±

20

V

Continuous Drain Current

A

TA=25°C

ID

-6.7

A

TA=70°C

-5.0

Pulsed Drain Current

B

IDM

±

50

A

Continuous Source Current (Diode Conduction)

A

IS

-2.1

A

Power Dissipation

A

TA=25°C

PD

5.0

W

TA=70°C

3.2

Operating Junction and Storage Temperature Range

TJ, TSTG

-55 ~ 150

°C

THERMAL RESISTANCE DATA

Maximum Junction to Ambient

A

t≦10 sec

RθJA

25

°C / W

Steady-State

65

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature.



Gate



Source



Drain

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

1.00

1.10

θ

0

°

12

°

B

5.70

5.80

b

0.33

0.51

C

0.20

0.30

d

1.27BSC

D

3.61

3.98

e

1.35

1.75

E

5.40

6.10

g

1.10

-

F

0.08

0.20

G

3.60

3.99

SOP-8PP

B

E

F

G

g

A

e

b

θ

D

C

d

Podobny numer części - SSP7481P

Producent	Numer części	Arkusz danych	Szczegółowy opis
SeCoS Halbleitertechnol...	SSP7481P	206Kb / 2P	P-Channel Enhancement MOSFET

More results

Podobny opis - SSP7481P

Producent	Numer części	Arkusz danych	Szczegółowy opis
SeCoS Halbleitertechnol...	SMG2321P	553Kb / 4P	P-Channel Enhancement MOSFET
	SMG2345P	71Kb / 2P	P-Channel Enhancement MOSFET
	SSN3139K	336Kb / 3P	P Channel Enhancement MOSFET
	SMG2361P	450Kb / 4P	P-Channel Enhancement MOSFET
Guangdong Kexin Industr...	AO3409-3	1Mb / 4P	P-Channel Enhancement MOSFET
	AO3409-HF-3	1Mb / 4P	P-Channel Enhancement MOSFET
	AO3419-3	1Mb / 4P	P-Channel Enhancement MOSFET
	KX9435	1Mb / 4P	P-Channel Enhancement MOSFET
	SI2301DS-3	1Mb / 5P	P-Channel Enhancement MOSFET
	SI2303DS	1Mb / 4P	P-Channel Enhancement MOSFET

More results

SSP7481P Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

SSP7481P Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Podobny numer części - SSP7481P

Podobny opis - SSP7481P

Html Pages

1 2

Arkusz danych Pobierz

Link URL