SML60B21

6/99

1

3

2

3.55 (0.140)

3.81 (0.150)

0.40 (0.016)

0.79 (0.031)

2.21 (0.087)

2.59 (0.102)

1.01 (0.040)

1.40 (0.055)

15.49 (0.610)

16.26 (0.640)

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

1.65 (0.065)

2.13 (0.084)

5.25 (0.215)

BSC

2.87 (0.113)

3.12 (0.123)

TO–247AD Package Outline.

Dimensions in mm (inches)

Drain – Source Voltage

Continuous Drain Current

Gate – Source Voltage

Gate – Source Voltage Transient

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

600

21

84

±20

±30

300

2.4

–55 to 150

300

21

30

1300

V

A

A

V

W

W/°C

°C

A

mJ

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

600V

21A

W

W

W

Pin 1 – Gate

Pin 2 – Drain

Pin 3 – Source

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Popular TO–247 Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

D

S

G