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HMC772LC4 Arkusz danych(PDF) 7 Page - Hittite Microwave Corporation

Numer części HMC772LC4
Szczegółowy opis  ACTIVE BIAS CONTROLLER
PDF  18 Pages
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Producent  HITTITE [Hittite Microwave Corporation]
Strona internetowa  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC772LC4 Arkusz danych(HTML) 7 Page - Hittite Microwave Corporation

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 7
13
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
1, 5, 8, 10,
13, 15, 20,
23, 25, 26,
Die Bottom
GND
These pads and the die bottom must be connected to a
high quality RF/DC ground.
2
EN
Enable pad. System is enabled when Ven is HIGH (VDIG).
If left floating, Ven defaults to HIGH (enabled).
3
SW
Internal switch resistance control pad. If left floating, VSW
defaults to HIGH.
12
DISBLSC
Disables short circuit lock down when pulled to ground.
Leave it floating to enable short circuit lock down.
4
VG2CONT
Control voltage of the VG2. Use a resistor divider between
VDD and GND to set the voltage. VG2 is typically 1.3V
lower than the VG2CONT
19
VG2
Second gate control.
6-7, 29-30
VDD, VDIG
Bias supply pan. Connect supply voltage
to this pad with appropriate filtering.
9
VREF
1.5V reference voltage. 0.1uF or greater capacitor to GND
is needed for noise filtering.
11
ISENSE
To adjust the bias current of the external amplifier connect
a resistor (Rsense) from ISENSE pad to GND. Use Eqn.2
to
determine the required Rsense value.
HMC981
v00.0611
ACTIVE BIAS CONTROLLER



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